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Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술
- 최진석;
- 안성진
초록
The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).
키워드
- 제목
- Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술
- 제목 (타언어)
- High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure
- 저자
- 최진석; 안성진
- 발행일
- 2020-01
- 저널명
- 마이크로전자 및 패키징학회지
- 권
- 27
- 호
- 1
- 페이지
- 1 ~ 7
- 언어
- KOR
- 출판사
- 한국마이크로전자및패키징학회
- 발행국가
- 대한민국
- 분량
- 7 페이지
- ISSN
- P 1226-9360