Platinum Schottky contacts on chemical vapor deposited two-dimensional monolayer MoS2 nanofilms transferred on polyethylene terephthalate substrate

초록

To promote the development of next-generation nano-sized electronics, it is essential to comprehend how electron features function in nanoscale devices, such as those based on twodimensional transition metal dichalcogenide (2D-TMDC) based on nanofilms. Particularly, monolayer molybdenum disulfide (MoS2) devices based on chemical vapor deposited (CVD) were run with low switching voltages and reduced energy consumption. In the present work, we have studied the electrical features of platinum Schottky contacts on monolayer MoS2 nanofilms transferred on polyethylene terephthalate (PET) substrates using current-voltage (I-V)and capacitance-voltage (C-V) measurements. The mean barrier height (Phi b) and mean ideality factor (n) of nanofilm contacts are determined to be 0.68 eV and 2.28 respectively. The values of Phi b and series resistance (RS) were derived from Cheung's method and are compared with Norde's method. The values obtained are good in accord with one another. Further, the interface state density (NSS) distribution was ranged from 1.07 x 1013 cm-2eV-1 (at 0.44 eV) to 6.24 x 1012 cm-2eV-1 (at 0.66 eV). According to the results, MoS2-based nanofilm Schottky contacts can be applied topically in 2D-TMDCs electronic device applications, which will help and guide future research.

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