Temperature dependent photoluminescence study on ZnO/Graphene nanocomposite films

  • Lee, Eunsil; 
  • Kim, Jong-Young; 
  • Park, Yong-Il; 
  • An, Sung Jin
Citations

WEB OF SCIENCE

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초록

We report observation of both free and defect-mediated excitonic emissions from temperature-dependent PL study on ZnO/graphene oxide (G-O) nanocomposite grown by ultrasonic assisted spray pyrolysis (UASP). From the temperature-dependent photoluminescence (PL) spectra of the ZnO/G-O nanocomposite, new graphene-related peak was observed at 372 nm along with the exciton transition bound to neutral acceptors or deep donors. The PL intensity of new graphene-related peaks (3.33 eV) become more prominent with increasing G-O concentration, and it was saturated or decreased with the addition of >7.0 wt% of G-O. This feature indicates that new graphene-related states were created below conduction band of ZnO, which supports the excitonic PL enhancement by graphene-embedding is contributed not by charge transfer, but by vacancy filling effect of G-O. (C) 2015 Elsevier B.V. All rights reserved.

키워드

Graphene; ZnO; Vapour synthesis; Photoluminescence; AL-DOPED ZNO; THERMOELECTRIC PROPERTIES; PHOTOCATALYTIC DEGRADATION; CHARGE-TRANSPORT; GRAPHENE; FABRICATION; TRANSISTOR; NANORODS
제목
Temperature dependent photoluminescence study on ZnO/Graphene nanocomposite films
저자
Lee, Eunsil; Kim, Jong-Young; Park, Yong-Il; An, Sung Jin
DOI
10.1016/j.cap.2014.12.025
발행일
2015-04
유형
Article
저널명
Current Applied Physics
권
15
호
4
페이지
563 ~ 566