Temperature-dependent electrical characteristics of normally-off triangular-shaped GaN nanowire wrap-gate transistors

초록

This study presents a detailed experimental investigation of temperature-dependent electrical properties of normally-off horizontally aligned triangular-shaped gallium nitride (GaN) nanowire wrap-gate transistor in the temperature range of 100-300 K in steps of 50 K. By employing advanced nanofabrication techniques and state-of-the-art measurement protocols, the temperature-dependent electrical characteristics including drain current (I-ds) versus gate voltage (V-gs) and transconductance(g(m)) versus gate voltage (V-gs) have been systematically evaluated. It is observed that the experimental values of drain current increase with increasing temperature for lower bias regimes (i.e., V-gs < 2 V) , whereas drain current decreases with increasing temperature for higher bias regimes (i.e., V-gs > 2 V). Our results not only elucidate the interplay between temperature-dependent characteristics and normally-off characteristics in horizontally aligned triangular-shaped GaN nanowires but also provide a robust framework for future design strategies aimed at optimizing high-performance semiconductor devices in extreme miniaturization regimes.

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