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안성진
sung jin, An
공과대학
재료공학부
연구분야
- Nano Optoelectronics Materials (LEDs, Solar cell, Graphene)
자료 필터
자료유형
발행연도
2008 ~ 2026
2008 2026
키워드
언어
전체 177건 중 31번부터 40번까지의 결과를 표시합니다.
2022
Article
Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets
- Choi, Jinseok ;
- Park, Seong-Gyu ;
- Choi, Yeo-Jin ;
- Baek, Seung-Mun ;
- Kim, Han-Jung ;
- ... An, Sung-Jin ;
- 외 2명
- 2022-12
- Micromachines
- MDPI
Article
Strain-engineered piezotronic effects in flexible monolayer MoS2 continuous thin films
- Puneetha, Peddathimula ;
- Mallem, Siva Pratap Reddy ;
- Im, Ki-Sik ;
- An, Sung-Jin ;
- Lee, Dong-Yeon ;
- 외 3명
- 2022-12
- Nano Energy
- ELSEVIER
Article
Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO4/H2SO4 Solution
- Choi, Jin-Seok ;
- Im, Ki-Sik ;
- Lee, Tae-Kyun ;
- Choi, Yeo-Jin ;
- An, Sung-Jin
- 2022-04
- Crystals
- MDPI
Article
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
- Im, Ki-Sik ;
- Mallem, Siva Pratap Reddy ;
- Choi, Jin-Seok ;
- Hwang, Young-Min ;
- Roh, Jae-Seung ;
- ... An, Sung-Jin ;
- 외 1명
- 2022-02
- NANOMATERIALS
- MDPI
Article
On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
- Im, Ki-Sik ;
- Choi, Uiho ;
- Kim, Minho ;
- Choi, Jinseok ;
- Kim, Hyun-Seop ;
- ... An, Sung Jin ;
- 외 2명
- 2022-01-03
- Applied Physics Letters
- AIP Publishing
2021
Article
Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer
- Choi, Yeo-Jin ;
- Lee, Jae-Hoon ;
- Choi, Jin-Seok ;
- An, Sung-Jin ;
- Hwang, Young-Min ;
- ... Roh, Jae-Seung ;
- 외 1명
- 2021-05
- Crystals
- MDPI
2020
Conference
CVD Graphene oxidation and Graphene/Oxidized Graphene/Graphene lateral heterostructures field-effect transistor
- 2020-11-19
- 대한민국
Article
Effects of arsenic implantation and rapid thermal annealing on ZnO nanorods for p-type doping
- Choi, Jinseok ;
- An, Sung Jin
- 2020-09
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- A V S AMER INST PHYSICS