Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

초록

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (V-gs < V-th). Sharp fluctuations happen when the temperature rises with a gate voltage of V-th < V-gs < V-FB. The conductance steadily decreases with increasing temperature after increasing the gate bias to V-gs > V-FB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.

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